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FLL1200IU-3
L-Band High Power GaAs FET FEATURES
* * * * * Push-Pull Configuration High Power Output: 120W (Typ.) High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation.
DESCRIPTION
The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
* Solid State Base-Station Power Amplifier. * WLL Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C)
Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 187.5 -65 to +175 +175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with gate resistance of 10. 3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Drain Current Power-Added Efficiency Thermal Resistance CASE STYLE: IU
Note 1: The device shall be measured at a constant VGS condition.
Symbol IDSS gm Vp VGSO Pout GL IDSR add Rth
Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 28.8A VDS = 5V, IDS = 2.88A IGS = -2.88mA VDS = 12V f = 2.5 GHz IDS = 5.0A Pin = 41.0dBm Note 1 Channel to Case
Min. -1.0 -5 49.8 10.0 -
Limits Typ. Max. 48 24 -2.0 50.8 11.0 20 44 0.6 -3.5 30 0.8
Unit A S V V dBm dB A % C/W
Edition 1.4 December 1999
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FLL1200IU-3
L-Band High Power GaAs FET
POWER DERATING CURVE
200
OUTPUT POWER & add vs. INPUT POWER
52
Total Power Dissipation (mW)
50
150
VDS = 12V IDS = 5.0A f = 2.5GHz Pout
50
48
Output Power (dBm)
46
100
44
40
50
42
add
30
40
0 0 50 100 150 200
20
38
10
Ambient Temperature (C)
26 28 30 32 34 36 38 40 0 42
Input Power (dBm)
OUTPUT POWER vs. FREQUENCY
52 51 49 47 45 43 41
31dBm
VDS = 12V IDS = 5A
Pin=42dBm 41dBm 39dBm
Output Power (dBm)
35dBm
39 37
27dBm
2.35
2.4
2.45
2.5
2.55
2.6
2.65
2.7
Frequency (GHz)
2
add (%)
FLL1200IU-3
L-Band High Power GaAs FET
OUTPUT POWER vs. IMD VDS = 12V IDS = 5.0A f = 2.5GHz f = 1.0MHz 2-tone test
-25
IM3
-30
-35
IMD (dBc)
IM5
-40
-45
-50
-55
-60 33 35 37 39 41 43 45
Total Output Power (dBm)
FREQUENCY (MHZ)
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000
S11 MAG
.924 .925 .916 .919 .916 .918 .915 .921 .916 .916 .907 .879 .797 .504 .142 .473 .639 .722 .784 .833 .851 .844 .802 .748 .702 .720 .778 .827 .859 .878 .887
ANG
167.9 166.5 165.4 164.3 162.7 161.3 159.2 156.9 153.5 149.8 144.4 136.3 122.7 98.3 -176.2 -169.7 177.2 167.8 159.2 148.2 134.5 117.7 94.3 62.0 17.6 -31.3 -71.5 -99.9 -119.2 -132.7 -143.2
S-PARAMETERS Download S-Parameters, click here VDS = 12V, IDS = 2.5A S21 S12 S22 MAG ANG MAG ANG MAG ANG
.405 .420 .444 .476 .517 .573 .643 .732 .854 1.032 1.310 1.777 2.631 3.957 4.372 3.661 3.009 2.643 2.323 1.962 1.556 1.239 1.012 .847 .683 .511 .352 .236 .163 .115 .086 19.7 10.8 1.6 -9.2 -19.8 -31.5 -43.6 -56.3 -69.8 -83.6 -98.8 -116.9 -141.7 178.8 125.5 87.7 55.7 26.2 -4.8 -36.6 -65.9 -91.5 -115.7 -141.4 -169.5 162.6 137.6 118.5 103.8 92.2 82.7 .004 .005 .006 .006 .008 .008 .008 .009 .009 .011 .013 .015 .021 .032 .038 .037 .036 .037 .037 .035 .033 .029 .027 .024 .021 .018 .014 .012 .011 .010 .010 12.6 7.2 -4.6 -9.9 -13.2 -26.4 -34.9 -42.6 -57.7 -77.0 -92.5 -119.8 -156.8 151.7 85.2 40.0 2.3 -30.6 -66.6 -99.5 -129.0 -152.6 -175.5 163.0 139.1 119.7 99.4 89.2 76.1 70.3 69.7 .894 .883 .868 .853 .837 .819 .801 .780 .760 .734 .699 .642 .532 .369 .488 .564 .491 .308 .129 .348 .582 .730 .810 .857 .886 .905 .913 .920 .915 .919 .918 166.2 165.0 163.6 162.3 161.3 160.2 158.8 157.4 155.9 153.8 151.1 147.0 142.7 154.6 175.8 165.5 151.9 143.7 -166.4 -122.7 -132.0 -142.8 -152.1 -159.7 -165.6 -171.0 -175.3 -178.5 177.2 173.7 170.8
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs.
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FLL1200IU-3
L-Band High Power GaAs FET
Case Style "IU"
23.90.25 (0.941) 2.0 MIN. 12-R0.5
1 2
0.1 (0.004)
6
3
2.0 (0.078) 2.0 MIN. 4-R1.3
5 4
15.50.15 (0.610)
17.40.15 (0.685)
8.00.15 (0.315)
1.90.15 (0.075) 2.40.15 (0.094)
10.00.2 (0.393) 30.40.25 (1.181) 34.00.25 (1.339)
4.5 Max. (0.177)
1, 2: 3: 4, 5: 6:
0.70.2
Gate Source Drain Source
Unit: mm (inches)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0299M200
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